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唐子媚,鲁姣,刘宇伦,翁瑶,陆珊珊,莫祖康,谢武林,何欢,符跃春,沈晓明.Si衬底掺杂浓度对InGaN/Si异质单结太阳电池性能的影响[J].广西科学,2017,24(6):561-567. [点击复制]
- TANG Zimei,LU Jiao,LIU Yulun,WENG Yao,LU Shanshan,MO Zukang,XIE Wulin,HE Huan,FU Yuechun,SHEN Xiaoming.Effects of Si Substrate Doping on the Performances of InGaN/Si Heterojunction Solar Cells[J].Guangxi Sciences,2017,24(6):561-567. [点击复制]
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| Si衬底掺杂浓度对InGaN/Si异质单结太阳电池性能的影响 |
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唐子媚, 鲁姣, 刘宇伦, 翁瑶, 陆珊珊, 莫祖康, 谢武林, 何欢, 符跃春, 沈晓明
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| (广西大学资源环境与材料学院, 广西有色金属及特色材料加工重点实验室, 广西南宁 530004) |
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| 摘要: |
| [目的]研究p-Si衬底掺杂浓度对InGaN/Si异质单结太阳电池性能的影响,为制备高效太阳电池提供理论基础。[方法]将器件的n-InGaN掺杂浓度固定为1016 cm-3,在改变p-Si衬底掺杂浓度NA的情况下,采用一维光电子和微电子器件结构分析模拟软件(AMPS-1D)对InGaN/Si异质单结太阳电池器件的各项性能参数进行模拟。[结果]随着掺杂浓度NA的升高,电池的电流密度JSC和填充因子FF随之升高,当到达一定高的掺杂浓度范围时(NA>5.00×1017cm-3),JSC基本保持不变,约为28.12 mA/cm2,FF保持在0.85左右且变化不大。开路电压VOC和光电转换效率Eff与掺杂浓度的大小呈正相关关系,随着NA的增大,VOC、Eff缓慢增大。[结论]高掺杂浓度下的太阳电池具有较好的光电转换效率。低掺杂浓度的太阳电池光电转换效率较低,这是因为其对应的尖峰势垒高度和宽度均较大,影响了光生载流子的输运。 |
| 关键词: 异质结 InGaN薄膜 太阳电池 AMPS-1D |
| DOI：10.13656/j.cnki.gxkx.20171228.002 |
| 投稿时间：2017-07-19 |
| 基金项目:国家自然科学基金项目(61474030),广西自然科学基金项目(2015GXNSFAA139265),中国科学院重点实验室开放基金项目(15ZS06),广西科学研究与技术开发科技攻关计划项目(1598008-15)和南宁市科学研究与技术开发科技攻关计划项目(20151268)资助。 |
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| Effects of Si Substrate Doping on the Performances of InGaN/Si Heterojunction Solar Cells |
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TANG Zimei, LU Jiao, LIU Yulun, WENG Yao, LU Shanshan, MO Zukang, XIE Wulin, HE Huan, FU Yuechun, SHEN Xiaoming
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| (Guangxi Key Laboratory for Non-ferrous Metal and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, Guangxi, 530004, China) |
| Abstract: |
| [Objective] In order to provide a theoretical basis for the preparation of high efficiency solar cells, the effects of doping concentration of p-type Si on the performances of InGaN/Si heterojunction solar cells was studied.[Methods] In this paper, the n-type InGaN doping concentration was fixed at 1016cm-3 when the doping concentration NA of p-type Si substrate varied, then the results of the current density JSC,the open circuit voltage VOC, the filling factor FF, and the photoelectric conversion efficiency Eff of the InGaN/Si heterojunction solar cell device could be obtained by using a one-dimensional device simulation program for the Analysis of Microelectronic and Photonic Structures (AMPS-1D).[Results] With the increase of the doping concentration NA,the current density JSC and the filling factor FF increased. When the doping concentration reached a certain range (NA>5.00×1017cm-3),JSC basically unchanged,about 28.12 mA/cm2, FF remained around 0.85 and did not change much. The open circuit voltage VOC and the photoelectric conversion efficiency Eff both had a positive correlation with the doping concentration NA.As the NA increased, the VOC and Eff increased slowly.[Conclusion] The solar cells with higher doping concentration of Si substrate had better photoelectric conversion efficiency. Those with lower doping concentration had lower efficiency, because their corresponding peak height and width of potential barrier were large,affecting the transport of photo-generated carriers. |
| Key words: heterojunction InGaN films solar cells AMPS-1D |
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