| 摘要: |
| 基于ESD应力下栅接地N型MOS管(GGNMOS)的工作特性,提出2种开启后区域的器件级模型结构和相应的参数提取方法,并利用Matlab分别基于两种模型对不同工艺参数的样品进行模拟,获得相应的I-V特性曲线。虽然模型1比模型2简单,而且需要的参数少,但是模型2比模型1更为精确,与实际情况更吻合,更加能够反映出工艺参数对样品开启后特性的影响。 |
| 关键词: ESD GGNMOS 模拟仿真 LNPN开启 |
| DOI： |
| 投稿时间：2008-11-17 |
| 基金项目:国家自然科学基金项目(50661001,50061001);广西科学基金资助项目(桂科基0639004)资助 |
|
| Research on the Simulation Method for ESD Protection Device GGNMOS after Turning on |
|
LIU Yao, GAO Ying-jun
|
| (College of Physical Science and Engineering Technology, Guangxi University, Nanning, Guangxi, 530004, China) |
| Abstract: |
| Based on the behavior of GGNMOS under ESD conditions,two device-level models of GGNMOS after turning on and the parameters extraction methods are given.Then the corresponding I-V characteristics of GGNMOS can be simulated by Matlab if the different process parameters are given to the two models.It is confirmed that the second model is superior to the first model by comparison and analysis. |
| Key words: ESD GGNMOS simulation LNPN turning on |
